This letter presents a low-power transimpedance amplifier (TIA), supporting both 25 and 40-Gb/s communication. It exhibits an optical modulation amplitude sensitivity of −10.6 dBm at 25 Gb/s
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A 40-Gb/s transimpedance amplifier (TIA) is proposed using multistage inductive-series peaking for low group-delay variation. A transimpedance limit for multistage TIAs is derived, and a...
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In this article, a wide-bandwidth, fully differential transimpedance amplifier (TIA) is implemented in Taiwan Semiconductor Manufacturing Company 90-nm complementary
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Transimpedance feedback amplifiers are commonly used as preamplifiers with low-input impedance and flat-gain characteristics. To achieve high-quality voltage signals, wideband transimpedance
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The transimpedance amplifier incorporating a differential common-base shunt-feedback topology features isolation to input capacitance and high transimpedance limit.
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Current-to-Voltage Amplifier for use with Photodiode-Based Detectors. Transimpedance Amplifiers, Standalone Devices with Data Acquisition as well as Display Function (Optometer).
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View product information for Transimpedance Amplifiers. Applications include photodetection with PMTs and photodiodes, spectroscopy, Scanning Tunneling Microscopy, ionization detectors, pyro and
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This letter presents a low-power transimpedance amplifier (TIA), supporting both 25 and 40-Gb/s communication. It exhibits an optical modulation amplitude sensitivity of -10.6 dBm at 25
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A 40 Gbit/s transimpedance amplifier (TIA) implemented in 0.13 μm SiGe BiCMOS with high linearity range is presented. The TIA features 24.2 dB (65.2 dB ) gain, a bandwidth of 34.2 GHz
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Abstract—A 40-Gb/s transimpedance amplifier (TIA) is realized in 0.18-μm CMOS technology. From the measured S-parameters, a transimpedance gain of 51.0 dBΩ and a 3-dB bandwidth up to 30.5 GHz (
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This paper describes the design of a 40 Gb/s transimpedance amplifier (TIA) for high-density optical fiber communication system. This TIA incorporates modified
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To make 40G and 100G equipment available, a whole new batch of special components is necessary to meet those data speed requirements. One critical part is the transimpedance amplifier (TIA) (see
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This paper presents a fully differential transimpedance amplifier (TIA) realized in a standard 65-nm CMOS process, where a novel mirrored-cascode (MC) input configuration is proposed for differential
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Abstract: A 40-Gb/s transimpedance amplifier (TIA) is realized in 0.18- μm CMOS technology. From the measured S-parameters, a transimpedance gain of 51 dBΩ and a 3-dB bandwidth up to 30.5 GHz
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A 40-Gb/s transimpedance amplifier (TIA) is realized in 0.18-μm CMOS technology. From the measured S-parameters, a transimpedance gain of 51.0 dBΩ and a 3-dB bandwidth up to 30.5
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A 3.6 kΩ InP HBT transimpedance amplifier (TIA) has been demonstrated with a bandwidth of 60 GHz. Gain flatness of ±2 dB and DC power
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A 40-Gb/s transimpedance amplifier (TIA) is proposed using multistage inductive-series peaking for low group-delay variation. A transimpedance limit for multistage TIAs is derived, and a bandwidth
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A 40-Gb/s transimpedance amplifier (TIA) is proposed using multistage inductive-series peaking for low group-delay variation. A transimpedance limit for multistage TIAs is derived, and a bandwidth
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(DOI: 10.1109/BIPOL.2010.5667977) A broadband differential Transimpedance amplifier (TIA) has been designed and measured in 0.13µm BiCMOS Technology. Regulated Cascode (RGC) configuration
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A 40-Gb/s transimpedance amplifier (TIA) is proposed using multistage inductive-series peaking for low group-delay variation. A transimpedance limit for multistage TIAs is derived, and a
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A 40-Gb/s transimpedance amplifier (TIA) is proposed using multistage inductive-series peaking for low group-delay variation and demonstrates a transimpingance figure of merit of 200.7 Ω/pJ.
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A 40Gb/s transimpedance-AGC amplifier is implemented in 90nm CMOS. The TIA uses reversed triple-resonance networks and negative feedback in a common-gate configuration.
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